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Features Innovative
architecture allows SWP-200 to be configured for your traditional or most complex and challenging processes and/or wafers and substrates. Available for Photoresists,
Polyimides, Photosensitive Polyimide, S.O.G., Low K, and thick or thin film. Gentle and precision handling for processing of GaAs, LiN, Si, SiC, InP, InT, SiN, InAs,
InSb, GaSb Glass, Ceramic and various other specialty materials. Features:
- 1 or 2 Spin Process Modules
- Single Coat, Single Develop, Dual-Coat, Dual-Develop or Coat/Develop Patented solvent pools in the cup provide continuous clean function and solvent rich
stable environment.
- Linear Programmable Motion Dispense Arms for Coater or Developer
- 1 to 8 Stacked Hotplates, Plus 1 or 2 Coolplate Buffers
- Robotic Wafer transfer provided by patented Acrabot, 5 axis DSP controlled handler
- Mini-environment Enclosure
- Integrated Electronics
- Built-in barrier keeps liquids and vapors safely separated from electronics and controls.
- Integrated Chemical Control Bay
- Containment and easy access for pumps, metering valves, constant temperature fluid manifolds, and waste drains.
- Windows Style User Interface, with On-line Help Manual, and module diagnostic support
- Process cup with Patented process enhancements
- Two position spin chuck height, high acceleration (1.25 HP) spin motor, Patented Spin Agitation, coupled with high and low programmable exhaust gives the
system the flexibility to create both thick and thin coatings in a production environment.
- Cool-On-Pins capability
- Reduces film stress in thick coatings.
Specifications:
Coater Capability:
Programmable Spin Speed ................................ 1 RPM Increments from 10 to 8,000 RPM
Accuracy .................................................... 250-8,000 RPM Better than +/- 2 RPM
Programmable Acceleration .............................. 200-50,000 RPM/Sec Acceleration Control ....................................... Better than +/- 100 RPM/Sec
Patented Agitation motion ............................... Minimize resist consumption, and improve coat planarization Programmable Linear Dispense
.......................... Arm Motion programmable on 4 independently selectable arms Stacked Hotplates:
Programmable Temperature .............................. 35ēC to 400ēC Range with 0.1ēC increments
Temperature control ....................................... +/- .15 Deg C Thermal Uniformity ........................................ +/- .2 Deg C
Programmable Proximity Bake ............................ 5 Programmable pin positions above hotplate
Repeatability ................................................ Better than 25 um repeatability of proximity pin height
Fixed Proximity Bake ...................................... Optional 50 to 250 um fixed height offsets built into hotplate
Time at each bake step ................................... 0.0 to 600.0 seconds in 0.1 Second increments
Vacuum Hold Down ......................................... 20.0 to 25.0" HG HMDS Prime:
Programmable Temperature .............................. 35ēC to 150ēC Range with 0.1ēC increments
Fixed Proximity Bake ...................................... 75 um fixed height offsets built into hotplate
Time at each prime step .................................. 0.0 to 600.0 seconds in 0.1 Second increments
HMDS Containment ........................................ Prime performed at 5 inch HG followed by Nitrogen purge
Bake Cap Dehydration ..................................... 20.0" HG
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